A 28-36 GHz Optimized CMOS Distributed Doherty Power Amplifier with A New Wideband Power Divider Structure

نویسندگان

  • M. Tavakoli Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran
  • P. Amiri Electrical Engineering Department, Shahid Rajaee Teacher Training University, Tehran, Iran
چکیده مقاله:

Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a very wide bandwidth, i.e. 1-40GHz, was designed to cover the whole Ka band. The designed Doherty power amplifier consisted of two different amplification paths called main and auxiliary. To amplify the signal in each of the two pathways, a cascade distributed power amplifier was used. The main reason for combining the distributed structure and cascade structure was to increase the gain and linearity of the power amplifier. Results: Measurements results for designed power divider are in good agreement with simulations results. The simulation results for the introduced structure of power amplifier indicated that the gain of proposed power amplifier at the frequency of 26-35GHz was more than 30dB. The diagram of return loss at the input and output of power amplifier in the whole Ka band was less than -8dB. The maximum Power Added Efficiency (PAE) of the designed power amplifier was 80%. The output p 1dB of the introduced structure was 36dB, and the output power of power amplifier was 36dBm. Finally, the IP3 value of power amplifier was about 17dB. Conclusion: The strategy presented in this paper is based on usage of Doherty and distributed structures and a new wideband power divider to benefit from their advantages simultaneously.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Micromachined 28-GHz Power Divider in CMOS Technology

A broad-band power divider is presented in CMOS technology. The devices are realized by postprocessing chips that are fabricated in a standard 1.2m CMOS process. Developed postprocessing includes wire bonding for ground equalization, deposition of a stress-compensation layer, and selective etching of the silicon substrate. By employing coupled coplanar transmission lines, the area of dividers i...

متن کامل

A Symmetrical Optimized Doherty Power Amplifier for LTE Band41

A symmetric Power Amplifier with an optimized impedance quarter wave transmission line is presented using a thermally enhanced high Power LDMOS FET i.e. a 140W Infineon PTFC261402 device. This implementation is realized in the operating frequency of LTE Band41 (2.496GHz-2.69GHz) applicable for LTE base stations. This design achieves a high efficiency that persists for an output power back off r...

متن کامل

A fully integrated 2.45 GHz 0.25μm CMOS power amplifier

A fully integrated differential class-AB power amplifier has been designed in a 0.25um CMOS technology. It is intended for medium output power ranges such as Bluetooth class I, and has an operating frequency of 2.45GHz. By using two parallel output stages that can he switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output pow...

متن کامل

A 50–59 GHz CMOS Injection Locking Power Amplifier

The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The bu...

متن کامل

High Gain of 3.1-5.1 GHz CMOS Power Amplifier for Direct Sequence Ultra-Wideband Application

This paper presents the design a power amplifier (PA) for direct sequence ultra-wideband applications using 0.13 μm CMOS technology operating in a low band frequency of 3.1 GHz to 5.1 GHz. Current-reused technique is employed at the first stage to increase the gain at the upper end of the desired band. Cascaded common source configuration with shunt peaking inductor at the second stage helps to...

متن کامل

Modified Doherty Power Amplifier for Wider Band

Wireless communication system are developing rapidly, due to which new standards like WIMAX and 4G Long Term Evaluating(LTE) with a purpose of achieving high data rate result in high end applications such as high speed internet, video conferences and broadband width. These applications require mobile base stations at the transmitter as well as at receiver (T/R) to support features like multiple...

متن کامل

منابع من

با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ذخیره در منابع من قبلا به منابع من ذحیره شده

{@ msg_add @}


عنوان ژورنال

دوره 8  شماره 1

صفحات  85- 96

تاریخ انتشار 2019-12-20

با دنبال کردن یک ژورنال هنگامی که شماره جدید این ژورنال منتشر می شود به شما از طریق ایمیل اطلاع داده می شود.

میزبانی شده توسط پلتفرم ابری doprax.com

copyright © 2015-2023